Wide Band Gap Semiconductor Nanowires 2

Zusatztext

<p><b>This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.</b></p><p>Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.</p>

Autorenportrait

<strong>Vincent Consonni</strong> is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 articles in peer-reviewed journals.<p><strong>Guy Feuillet</strong> is Senior Scientist at CEA (French Atomic and Alternative Energy Commission), France. He has initiated and coordinated many internal programs (GaN nanostructures, X-ray detectors for medical imaging, solid state lighting) and R&D programs during his work at CEA. He is a permanent member of the scientific advisory board at CEA/LETI, and a member of the selection committee for the French National Agency for Research (ANR). He has published about 120 papers in peer-reviewed journals.

Weitere Details